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Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers

2021-11-25

 

Author(s): Yang, J (Yang, J.); Wang, BB (Wang, B. B.); Zhao, DG (Zhao, D. G.); Liu, ZS (Liu, Z. S.); Liang, F (Liang, F.); Chen, P (Chen, P.); Zhang, YH (Zhang, Y. H.); Zhang, ZZ (Zhang, Z. Z.)

Source: JOURNAL OF APPLIED PHYSICS Volume: 130 Issue: 17 Article Number: 173105 DOI: 10.1063/5.0069567 Published: NOV 7 2021

Abstract: The performance of ultraviolet (UV) laser diodes (LDs) with a low Al mole fraction AlGaN cladding layer was investigated by varying the thicknesses of the waveguide layer. It is found that (1) the loss of carriers in the waveguide layer is much larger than that in blue or green LDs due to the shallower quantum well and consequently a weaker carrier confinement of UV lasers. (2) Carrier loss in the waveguide layer can be suppressed by using a thinner waveguide layer. Therefore, the threshold current of LDs can be reduced. (3) The ultraviolet GaN/AlGaN single quantum well laser diodes lasing at 366 nm are fabricated by using relatively thin AlGaN waveguide layers and low Al mole fraction AlGaN cladding layers.

 

 

Accession Number: WOS:000715854100006

ISSN: 0021-8979

eISSN: 1089-7550

Full Text: https://aip.scitation.org/doi/10.1063/5.0069567  

 



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